Research-grade epitaxial wafers

Comprehensive Simulation Capabilities

We deliver accurate modeling and numerical analysis across a wide range of semiconductor devices, including:

• Band Diagram Analysis: visualize energy band alignment, heterojunction interfaces, and quantum well confinement effects
• Electric Field Distribution: evaluate breakdown voltage, carrier drift dynamics, and avalanche multiplication regions
• Doping Concentration Profiles: simulate dopant diffusion, activation, and junction depth with nanometer precision
• Optical Absorption & Carrier Transport: model light–matter interaction for photodiodes, solar cells, and nanowire devices
• Thermal Effects & Reliability: predict self-heating, leakage, and long-term stability under high-power operation

Why Choose EpiSolution’s TCAD Simulation?

• Tailored to Epitaxial Structures: optimized for InGaAs PIN PDs, APDs, QCLs, and GaAs solar cells, reflecting our unique expertise in epitaxy and superlattice design
• Accelerated Device Development: test multiple design iterations virtually before moving into costly wafer growth and processing
• Seamless Integration with Fabrication: simulation parameters aligned with our MOCVD-grown epitaxial wafers for maximum consistency between theory and practice

Applications

• High-speed InGaAs photodetectors (PIN PD, APD, SPAD)
• Quantum Cascade Lasers (QCLs) with custom superlattice designs
• GaAs high-efficiency solar cells for aerospace and IoT applications
• Custom Device Requests