Premium-grade epitaxial wafers

Optimized Active Region Design for High-Performance QCLs

Our advanced QCL structures incorporate a multi-stage active core and injector region, optimized for efficient intersubband transitions. These layers are carefully lattice-matched or strain-compensated to InP substrates, which minimizes defect density and suppresses strain-related degradation, leading to superior optical and thermal performance.

Extensive Expertise in QCL Epitaxy and Regrowth

EpiSolution offers deep technical experience in the growth and regrowth of QCL structures, including buried heterojunction regrowth using Fe-doped InP. Our proven track record enables us to provide tailored support to customers developing mid- to far-infrared QCLs—from custom structure design and epitaxy to device performance optimization. Whether you're developing early prototypes or scaling up production, we ensure high performance and yield.

Related Publications

Our expertise is grounded in peer-reviewed research, including:
 1. J. C. Shin et al., “Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers”, Appl. Phys. Lett. 94, 201103 (2009)
  https://doi.org/10.1063/1.3139069
 2. J. C. Shin et al., “Ultra-low temperature sensitive deep-well quantum cascade lasers (λ=4.8 µm) via uptapering conduction band edge of injector regions”, Electron. Lett. 45, 741–743 (2009)
  https://doi.org/10.1049/el.2009.1393
 3. J. C. Shin et al., “Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD”, J. Cryst. Growth 312, 1379–1382 (2010)
  https://doi.org/10.1016/j.jcrysgro.2009.09.034
 4. J. C. Shin et al., “Crystal growth via metal–organic vapor phase epitaxy of quantum-cascade-laser structures composed of multiple alloy compositions”, J. Cryst. Growth 357, 15–19 (2012)
  https://doi.org/10.1016/j.jcrysgro.2012.07.013
 5. Dan Botez et al., “High internal differential efficiency, mid-infrared quantum cascade lasers”, Proc. SPIE 10123, 101230Q (2017)
  https://doi.org/10.1117/12.2249537

Performance Highlights

• High Slope Efficiency: Maximizes output power relative to drive current
• Low Threshold Current Density: Enables energy-efficient operation
• Robust High-Temperature Operation: Ensures stability under elevated thermal loads
• L-I-V Data Support: Facilitates rapid prototyping and integration in device design

Key Specifications for QCL Development

• Available Wafer Size: 2"
• Materials: InP-based heterostructures (e.g., InₓGa₁₋ₓAs / InₓAl₁₋ₓAs)
• Epitaxial Structure: Repeated active–injector stage pairs, lattice-matched or strain-compensated to InP
• Wavelength Range: 4–12 µm (customizable uupon request)
• Interface Roughness: < 5 Å RMS (via TEM/AFM)
• Layer Uniformity: < ±5% across 2” wafer
• Growth Method: MOCVD