KOR
2024.12.10 | EPI Solution
Our GaAs-based photovoltaic (PV) epi wafers are meticulously engineered for high-efficiency solar energy conversion, tailored for aerospace, portable power, and flexible electronics applications. Grown by advanced epitaxial techniques, these wafers deliver exceptional crystallinity, ultra-thin flexibility, and high power-to-weight ratios—enabling next-generation lightweight PV modules.
Our solar structures adopt a dual-junction or ultra-thin single-junction configuration, designed for maximum photon absorption and minimal recombination losses. The epitaxial layers are precisely thickness-controlled, ensuring optimal quantum efficiency and current matching across junctions. Integration with lift-off and direct bonding techniques allows flexible or multi-surface deployment.
EpiSolution’s team brings extensive experience in the growth, lift-off, and transfer of high-performance GaAs-based solar structures. We support customers from initial structure design through to scalable fabrication, leveraging adhesive-free metal bonding and wafer recycling to enhance efficiency and sustainability. Whether for space-grade modules or custom IoT applications, we ensure high yield, minimal weight, and superior optical performance.
Our innovations are backed by peer-reviewed research, including:
"AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding", Energy Science & Engineering, 6, 47-55 (2018)
🔗 https://doi.org/10.1002/ese3.182
"Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives", Appl. Phys. Lett. 108, 253101 (2016)
🔗 https://doi.org/10.1063/1.4954039